| PART |
Description |
Maker |
| 2SD1816S-TL-E 2SD1816S-H 2SD1816S-E 2SD1816S-TL-H |
Bipolar Transistor
Bipolar Transistor (-)100V, (-)4A, Low VCE(sat), (PNP)NPN Single TP/TP-FA
|
ON Semiconductor
|
| UPC2766GR UPC2766GR-E1 UPC2766GS UPC2766GS-E1 PC27 |
Bipolar Analog Integrate Circuit(双极模拟集成电路)
WIDE BAND IQ DEMODULATOR FOR DIGITAL VIDEO/DATA RECEIVER
QUADRATURE DEMODULATOR,BIPOLAR,SOP,8PIN,PLASTIC
From old datasheet system
|
NEC Corp.
NEC Electron Devices
NEC[NEC]
|
| TWA8-48S15 TWA8-48-5 TWA8-48S3.3 TWA8-24S5 TWA8-48 |
Hybrid emitter switched bipolar transistor ESBT® 900 V - 20 A - 0.06 Ohm
Emitter switched bipolar transistor ESBT® 1200 V - 8 A - 0.10 Ohm
Hybrid emitter switched bipolar transistor ESBT 2200 V - 7 A - 0.07 Ohm power module
Hybrid emitter switched bipolar transistor ESBT 2200 V - 3 A - 0.33 Ohm
Emitter switched bipolar transistor ESBT® 1700V - 4A - 0.17 Ohm
Hybrid emitter switched bipolar transistor ESBT 1500V - 8A - 0.075 Ohm 模拟IC
Analog IC 模拟IC
|
Bourns, Inc.
|
| 82S129 N82S126A N82S126N N82S129A N82S129N 82S126 |
V(cc): 7.0V; V(in): 5.5V; ; 1Kbit TTL bipolar PROM. For phototyping/volume production, sequential conrollers, format conversion, hardwired algorithms, etc.
1K BIT TTL BIPOLAR PROM
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| LM7809 LM7812NBSP LM7824 LM7805 LM7815 LM7812 LM78 |
VOLT REGULATOR,FIXED, 9V,BIPOLAR,SIP,3PIN,PLASTIC
Positive Fixed Voltage Regulator
IC,VOLT REGULATOR,FIXED, 24V,BIPOLAR,SIP,3PIN,PLASTIC
VOLT REGULATOR,FIXED, 5V,BIPOLAR,SIP,3PIN,PLASTIC
IC,VOLT REGULATOR,FIXED, 15V,BIPOLAR,SIP,3PIN,PLASTIC
From old datasheet system
LM7800 Series 3-Terminal fixed Voltage Regulators
|
First Components Intern...
FCI[First Components International]
|
| KT234510 KT234505 |
Split-dual bipolar transistor module. 100A, 600V.
Split-Dual Bipolar Power Module (100 Amperes/600 Volts)
|
POWEREX[Powerex Power Semiconductors]
Powerex Power Semicondu...
|
| IRG4BC40K |
Insulated Gate Bipolar Transistors (IGBTs)(短路额定超快速绝缘栅型双极型晶体 绝缘门双极晶体管IGBTs）（短路额定超快速绝缘栅型双极型晶体管）
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A)
600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| MMJT9410T1 MMJT9410-D |
NPN Bipolar Power Transistor
Bipolar Power Transistors NPN Silicon
|
ON Semiconductor
|
| SL5067KGMPES SL5067KGDPAS |
RF MODULATOR,BIPOLAR,SOP,20PIN,PLASTIC
RF MODULATOR,BIPOLAR,DIP,20PIN,PLASTIC
From old datasheet system
|
GEC Plessey Semiconductors
|
| 30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
|
MDE Semiconductor
|
